Szczegóły publikacji
Opis bibliograficzny
A scheme for field-free p-SOT-MTJ by utilizing Oersted field from metal interconnects / Dingsong Jiang, Cancheng Xiao, Enlong Liu, Wenlong Yang, Witold SKOWROŃSKI, Shikun He, Tianxiang Nan // W: EDTM 2026 [Dokument elektroniczny] : 10th IEEE Electron Devices Technology & Manufacturing Conference : 1-4 March 2026, Penang, Malaysia. — Wersja do Windows. — Dane tekstowe. — Piscataway : IEEE, cop. 2026. — Dod. ISBN: 979-8-3315-8599-0 (print on demand). — e-ISBN: 979-8-3315-8598-3. — S. [1–3]. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. [2], Abstr. — Publikacja dostępna online od: 2026-05-06
Autorzy (7)
- Jiang Dingsong
- Xiao Cancheng
- Liu Enlong
- Yang Wenlong
- AGHSkowroński Witold
- He Shikun
- Nan Tianxiang
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 168038 |
|---|---|
| Data dodania do BaDAP | 2026-07-03 |
| Tekst źródłowy | URL |
| DOI | 10.1109/EDTM65772.2026.11497902 |
| Rok publikacji | 2026 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
Abstract
We propose a CMOS-compatible field-free switching (FFS) scheme for perpendicular spin-orbit torque magnetic tunneling junctions (p-SOT-MTJs), which utilizes the Oersted field generated by current in metal interconnects. Finite-element and micromagnetic simulations confirm the feasibility of this scheme. By combining experimental results and calculations, the energy consumption of p-SOT-MTJ based on this scheme is evaluated. The results show that the additional energy consumption introduced by generating the Oersted field is only ~ 9% at 1 ns switching latency. We also present a device structure and its read and write operations, indicating the potential for practical application. This work provides a universal and practical FFS solution for p-SOT-MTJs.