Szczegóły publikacji
Opis bibliograficzny
Light-induced spin polarization of low-energy electron states in semiconductor quantum dot with moderate Rashba spin–orbit coupling / G. DZIEMBAJ, G. Przepiórka, T. CHWIEJ // Solid State Communications ; ISSN 0038-1098. — 2025 — vol. 406 art. no. 116195, s. 1–5. — Bibliogr. s. 5, Abstr. — Publikacja dostępna online od: 2025-10-11
Autorzy (3)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 163917 |
|---|---|
| Data dodania do BaDAP | 2025-11-14 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.ssc.2025.116195 |
| Rok publikacji | 2025 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Solid State Communications |
Abstract
This study investigates the spin characteristics of single-electron photon-dressed states in a two-dimensional semiconductor quantum dot (QD). Floquet theory is used to demonstrate strong susceptibility of electron spin to combined effect of Rashba spin–orbit interaction (SOI) and the circular polarization of light that results in high spin polarizability with direction defined solely by the light helicity. This spin-Zeeman like effect is characterized by the light-induced pseudomagnetic field depending on laser and SOI parameters. Calculations performed under typical experimental conditions for In0.53Ga0.47As QD as well as the energy and intensities of dressing photons, indicate that this effect would be experimentally observable.
