Szczegóły publikacji
Opis bibliograficzny
Achieving near 100% fill factor for small pixel LGADs: study of first Trench Isolated LGADs fabricated at Micron Semiconductor Ltd / Fasih ZAREEF, Neil Moffat, Richard Bates, Dzmitry Maneuski, Ruirui Han, Mark Bullough, Mark Williams, Agnieszka OBŁĄKOWSKA-MUCHA, Tomasz SZUMLAK // Journal of Instrumentation [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 1748-0221. — 2025 — vol. 20 no. 7 art. no. P07037, s. [1], 1–15. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 14–15, Abstr. — Publikacja dostępna online od: 2025-07-23
Autorzy (9)
- AGHZareef Fasih
- Moffat Neil
- Bates Richard
- Maneuski Dzmitry
- Han Ruirui
- Bullough Mark
- Williams Mark R. J.
- AGHObłąkowska-Mucha Agnieszka
- AGHSzumlak Tomasz
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 161607 |
|---|---|
| Data dodania do BaDAP | 2025-08-25 |
| Tekst źródłowy | URL |
| DOI | 10.1088/1748-0221/20/07/P07037 |
| Rok publikacji | 2025 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp | |
| Creative Commons | |
| Czasopismo/seria | Journal of Instrumentation |
Abstract
This paper presents the development and characterization of Trench-Isolated LGADs (TI-LGADs). This architecture replaces traditional junction termination structures with narrow trenches to minimize inter-pixel distance (IPD) and enhance fill factor (FF). Fabricated by Micron Semiconductor Ltd., TI-LGADs demonstrate excellent electrical isolation, low leakage currents, and no premature breakdown up to 1000 V. Transient Current Technique (TCT) measurements and TCAD simulations reveal an IPD of less than 5 μm, a significant improvement over standard LGADs which have an IPD of ≈ 50 μm. The devices exhibit a gain of 2-3, consistent with simulations, and maintain good pixel isolation with minimal crosstalk. These results highlight the potential of TI-LGADs for fine-segmented, high-resolution 4D tracking applications, paving the way for future optimizations and radiation-hard designs.