Szczegóły publikacji
Opis bibliograficzny
Topological flat-band-driven metallic thermoelectricity / Fabian Garmroudi, Jennifer Coulter, Illia Serhiienko, Simone Di Cataldo, Michael Parzer, Alexander Riss, Matthias Grasser, Simon Stockinger, Sergii Khmelevskyi, Kacper PRYGA, Bartłomiej WIENDLOCHA, Karsten Held, Takao Mori, Ernst Bauer, Antoine Georges, Andrej Pustogow // Physical Review. X [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 2160-3308. — 2025 — vol. 15 iss. 2 art. no. 021054, s. 021054-1–021054-11. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 021054-9–021054-11, Abstr. — Publikacja dostępna online od: 2025-05-14
Autorzy (16)
- Garmroudi Fabian
- Coulter Jennifer
- Serhiienko Illia
- Cataldo Simone Di
- Parzer Michael
- Riss Alexander
- Grasser Matthias
- Stockinger Simon
- Khmelevskyi Sergii
- AGHPryga Kacper
- AGHWiendlocha Bartłomiej
- Held Karsten
- Mori Takao
- Bauer Ernst
- Georges Antoine
- Pustogow Andrej
Dane bibliometryczne
| ID BaDAP | 159994 |
|---|---|
| Data dodania do BaDAP | 2025-06-24 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevX.15.021054 |
| Rok publikacji | 2025 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Physical Review, X |
Abstract
Materials where flattened electronic dispersions arise from destructive phase interference, rather than localized orbitals, have emerged as promising platforms for studying emergent quantum phenomena. Crucial next steps involve tuning such flat bands to the Fermi level, where they can be studied at low energy scales, and assessing their potential for practical applications. Here, we show that the interplay of highly dispersive and ultraflat bands inherent to these systems can lead to extreme interband scattering-induced electron-hole asymmetry, which can be harnessed in thermoelectrics. Our comprehensive theoretical and experimental investigation of Ni3In1−𝑥Sn𝑥 kagome metals supports this concept, showing that it could lead to thermoelectric performance on par with state-of-the-art semiconductors such as Bi2Te3. In Ni3In, scattering-induced electron-hole asymmetry is, however, subdued by an exotic conduction mechanism arising from quantum tunneling of charge carriers between Dirac bands, unrelated to the flat band itself. We outline strategies to selectively switch off this tunneling transport through negative chemical pressure or strain. Our study proposes a new direction to explore in topological flat-band systems and vice versa introduces a novel tuning knob for thermoelectric materials.
