Szczegóły publikacji
Opis bibliograficzny
Defect chemistry and semiconducting properties of titanium dioxide. [Pt.] 2, Defect diagrams / T. Bak, J. Nowotny, M. Rękas, C. C. Sorrell // Journal of Physics and Chemistry of Solids ; ISSN 0022-3697. — 2003 — vol. 64 iss. 7, s. 1057–1067. — Bibliogr. s. 1066–1067, Abstr. — M. Rękas – afiliacja: The University of New South Wales, Sydney
Autorzy (4)
- Bak T.
- Nowotny J.
- Rękas Mieczysław
- Sorrell Charles C.
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 15641 |
|---|---|
| Data dodania do BaDAP | 2004-03-04 |
| Tekst źródłowy | URL |
| DOI | 10.1016/S0022-3697(02)00480-8 |
| Rok publikacji | 2003 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Physics and Chemistry of Solids |
Abstract
The present work derives defect diagrams for titanium dioxide, TiO2, within a wide range of oxygen partial pressures involving the n-type regime, the p-type regime and the n-p transition regime in the range 973-1373 K. The non-stoichiometry and related defect disorder of TiO2 are considered in terms of defects in both sub-lattices involving: Oxygen sublattice: oxygen vacancies Ti sublattice: Ti vacancies and Ti interstitials Defect diagrams are derived in terms of defects concentration (oxygen vacancies, tri- and four-valent Ti interstitials) as a function of oxygen partial pressure) at different levels of acceptor- and donor-type pre-imposed defects (Ti vacancies and foreign cations).
