Szczegóły publikacji
Opis bibliograficzny
Electronic and topological properties of a topological insulator sandwiched between ferromagnetic insulators / Piotr PIGOŃ, Anna Dyrdał // Journal of Magnetism and Magnetic Materials ; ISSN 0304-8853. — 2024 — vol. 593 art. no. 171795, s. 1–5. — Bibliogr. s. 5, Abstr. — Publikacja dostępna online od: 2024-02-01
Autorzy (2)
- AGHPigoń Piotr
- Dyrdał Anna
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 153153 |
|---|---|
| Data dodania do BaDAP | 2024-05-29 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.jmmm.2024.171795 |
| Rok publikacji | 2024 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Magnetism and Magnetic Materials |
Abstract
We consider a film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic proximity effect to the ferromagnetic layers. The magnetization of ferromagnetic layers can be changed by applying an external magnetic field or by varying thickness of the topological insulator (owing to the interlayer exchange coupling). The change in the magnetic configuration of the system affects the transport properties of the surface electronic states. Using the Green function formalism, we calculate spin polarization, anomalous Hall effect, and magnetoresistance of the system. We show, among others, that by tuning the gate voltage and magnetizations of the top and bottom FM layers, one can observe the topological transition to the quantum anomalous Hall state.
