Szczegóły publikacji
Opis bibliograficzny
Electrostatic quantum dots with designed shape of confinement potential / K. LIS, S. BEDNAREK, B. SZAFRAN, J. ADAMOWSKI // Physica. E, Low-Dimensional Systems & Nanostructures ; ISSN 1386-9477. — 2003 — vol. 17, s. 494–497. — Bibliogr. s. 497, Abstr. — ICSNN 2002 : International Conference on Superlattices, Nano-structures and Nano-devices : 22-26 July 2002, Toulouse, France
Autorzy (4)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 15075 |
|---|---|
| Data dodania do BaDAP | 2004-02-02 |
| Tekst źródłowy | URL |
| DOI | 10.1016/S1386-9477(02)00852-4 |
| Rok publikacji | 2003 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physica, E, Low Dimensional Systems & Nanostructures |
Abstract
In electrostatic (gated) quantum dots, the potential confining the electrons is generated by the electrostatic field, which is created by the external voltages applied to the leads. Changing the geometry of the nanodevice we can obtain a diverse class of confinement potentials. We discuss the choice of the nanodevice parameters, which allows us to get the confinement potentials with the designed shape: from the rectangular potential well to the potential well with smooth edges. In particular, we find the conditions, under which the confinement potential possesses the Gaussian shape or is parabolic in a large region of the quantum dot.