Szczegóły publikacji
Opis bibliograficzny
Metal-induced crystallization of amorphous semiconductor films: nucleation phenomena in Ag-Ge films / Aleksandr KRYSHTAL, Sergiy Bogatyrenko, Paulo Ferreira // Applied Surface Science ; ISSN 0169-4332. — Tytuł poprz.: Applications of Surface Science. — 2022 — vol. 606 art. no. 154873, s. 1-9. — Bibliogr. s. 9, Abstr. — Publikacja dostępna online od: 2022-09-14
Autorzy (3)
- AGHKryshtal Oleksandr
- Bogatyrenko Sergey I.
- Ferreira Paulo
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 142431 |
|---|---|
| Data dodania do BaDAP | 2022-10-06 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2022.154873 |
| Rok publikacji | 2022 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Applied Surface Science |
Abstract
The initial stages of interfacial interactions between Ag nanoparticles and amorphous Ge (a-Ge) films, in particular the mechanism and kinetics of metal-induced crystallization (MIC) of a-Ge films are investigated herein. Unsupported Ag-Ge films formed by PVD were used as a model. In situ high-resolution (S)TEM and low-loss monochromated STEM-EELS techniques were used for real-time observation of the nucleation and growth of crystalline Ge and intermediate phases, as well as mapping of chemical elements at the reaction zone. We show that crystallization is activated at the metal–semiconductor interface around ≈200 °C, followed by lateral crystallization of a-Ge film at temperatures above ≈400 °C. It was revealed that the MIC process occurs through intermediate phases. Metastable Ag0.8Ge0.2 hcp phase was identified at the reaction front at elevated temperatures, thus revealing the non-equilibrium melting of a eutectic alloy as the most probable mechanism of Ag-induced crystallization of a-Ge film. We show that the MIC process is activated only if the size of Ag nanoparticles exceeds a critical value, which is ≈8 nm in our case and equal to the thickness of the a-Ge film.
