Szczegóły publikacji
Opis bibliograficzny
Defect structure and electrical properties of vanadium pentoxide thin films / Krystyna SCHNEIDER // Journal of Materials Science : Materials in Electronics ; ISSN 0957-4522. — 2022 — vol. 33 iss. 13, s. 10410–10422. — Bibliogr. s. 10421–10422, Abstr. — Publikacja dostępna online od: 2022-03-19
Autor
Dane bibliometryczne
| ID BaDAP | 140122 |
|---|---|
| Data dodania do BaDAP | 2022-05-13 |
| Tekst źródłowy | URL |
| DOI | 10.1007/s10854-022-08028-9 |
| Rok publikacji | 2022 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Journal of Materials Science. Materials in Electronics |
Abstract
The point defect structure of V2O3, VO2, and V2O5 is reviewed. VO2 and V2O5 thin films were deposited by means of RF sputtering from a metallic V target in a reactive Ar + O2 atmosphere. Rutherford backscattering (RBS) and secondary-ion mass spectrometry (SIMS) were used to determine the chemical and phase composition as well as the profile distribution of elements in as-sputtered and hydrogen-treated VO2 films. The electrical properties of the V2O5 thin films were determined by means of impedance spectroscopy. At elevated temperatures thin films were found to interact with oxygen. Both singly and doubly ionized oxygen vacancies and electrons were the product of these interactions. The chemical diffusion coefficient was determined by measurements of transient electrical conductivity.
