Szczegóły publikacji
Opis bibliograficzny
Origin of electrical contact resistance and its dominating effect on electrical conductivity in $PbTe/CoSb_3$ composite / Artur KOSONOWSKI, Ashutosh Kumar, Karol Wolski, Szczepan Zapotoczny, Krzysztof T. WOJCIECHOWSKI // Journal of the European Ceramic Society ; ISSN 0955-2219. — Tytuł poprz.: International Journal of High Technology Ceramics. — 2022 — vol. 42 iss. 6, s. 2844–2852. — Bibliogr. s. 2851–2852, Abstr. — Publikacja dostępna online od: 2022-01-31
Autorzy (5)
- AGHKosonowski Artur
- AGHKumar Ashutosh
- Wolski Karol
- Zapotoczny Szczepan
- AGHWojciechowski Krzysztof Tomasz
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 139323 |
|---|---|
| Data dodania do BaDAP | 2022-02-28 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.jeurceramsoc.2022.01.049 |
| Rok publikacji | 2022 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp | |
| Czasopismo/seria | Journal of the European Ceramic Society |
Abstract
The electrical contact resistance (Rcont) is a crucial parameter that influences the electrical conductivity (σ) in a composite material. Herein, we study the origin of Rcont and its effect on electrical properties of PbTe/CoSb3 composite. In particular, a series of (1-x)PbTe/(x)CoSb3 polycrystalline composite is prepared for x = 0.00, 0.25, 0.50, 0.75 and 1.00. The phase and chemical stability of the composites are investigated using X-ray diffraction and electron microscopy techniques. The Seebeck coefficient (S) and electrical conductivity (σ) measured across a wide temperature range of 25–400 °C depict a degenerate semiconductor nature for all the samples. The σ decreases from 3300 to 1000 S/cm with x and is attributed to a significant decrease in carrier mobility (µ) from 330 to 25 cm2/(s·V). For an in-depth investigation of the reduced σ in the composite, Rcont between the phases is measured on PbTe/CoSb3 layered sample using the scanning thermoelectric microprobe (STM) technique (Rcont=14.1 μΩ·cm2). Bruggeman asymmetrical model that considers Rcont further re-establishes the changes in σ vs. x. A deeper understanding of the origin of Rcont is developed by preparing the band diagram for both phases using the Kelvin probe force microscopy (KPFM) technique, which suggests the presence of a potential barrier at the junction. The current-voltage (I-V) characteristic of the heterojunction indicates that the charge carrier follows the ohmic nature in one direction and non-ohmic in another. Hence, it indicates a possible scattering of carriers at the PbTe/CoSb3 interface in the composite that reduces µ. This study paves a new direction to select the composite components with aligned band structure that can be promising to design efficient TE composite materials. © 2022 Elsevier Ltd.