Szczegóły publikacji
Opis bibliograficzny
GaN and superjunction MOSFET transistor switching in a resonant switched-capacitor converter / Szymon FOLMER, Robert STALA // W: Ee 2021 [Dokument elektroniczny] : 21st international symposium on Power Electronics : Novi Sad, Serbia, October 27th–30th, 2021 : proceedings. — Wersja do Windows. — Dane tekstowe. — Piscataway : Institute of Electrical and Electronics Engineers, cop. 2021. — e-ISBN: 978-1-6654-0187-6. — S. [1–6]. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. [6], Abstr. — Publikacja dostępna online od: 2021-12-06
Autorzy (2)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 138161 |
|---|---|
| Data dodania do BaDAP | 2021-12-10 |
| Tekst źródłowy | URL |
| DOI | 10.1109/Ee53374.2021.9628224 |
| Rok publikacji | 2021 |
| Typ publikacji | materiały konferencyjne (aut.) |
| Otwarty dostęp |  |
| Wydawca | Institute of Electrical and Electronics Engineers (IEEE) |
Abstract
The paper presents switching process comparison among the gallium nitride (GaN) and the Superjunction (SJ) MOSFET transistors applied in the resonant switched-capacitor (SC) DC-DC converter. The topology belongs to the class of circuits where losses and EMI generation associated with an output capacitance of transistors are significant. An effect of the output capacitance of switches on the converter’s operation is examined by the switching waveforms analysis. An impact of temperature is demonstrated as well. Methods of improvement of switching quality by application of zero-voltage-switching (ZVS) mode and application of GaN switches are discussed. The paper bases on experimental results.
