Szczegóły publikacji

Opis bibliograficzny

Transport properties and electronic structure of ${M_{2}CuSb_{3}}$ compounds with ${M=Ti}$, Zr, Hf / N. V. Koblyuk [et al.], J. TOBOŁA // Journal of Alloys and Compounds ; ISSN 0925-8388. — 2003 — vol. 354 iss. 1–2, s. 6–12. — Bibliogr. s. 12, Abstr.

Autorzy (9)

  • Koblyuk N.
  • Shelyapina M. G.
  • Romaka L.
  • Stadnyk Yu.
  • Bodak O.
  • Fruchart Daniel
  • Hlil El Kebir
  • Wolfers Pierre
  • AGHToboła Janusz Stefan

Słowa kluczowe

electrical transportintermetallicselectronic structure

Dane bibliometryczne

ID BaDAP13669
Data dodania do BaDAP2003-06-23
DOI10.1016/S0925-8388(02)01344-0
Rok publikacji2003
Typ publikacjiartykuł w czasopiśmie
Otwarty dostęptak
Czasopismo/seriaJournal of Alloys and Compounds

Abstract

The crystal structure of the new compounds of formula M2CuSb3 with M=Ti, Zr, Hf was found topologically parent to that of the tetragonal binary Cu2Sb. However, a marked expansion of the c results in a distribution scheme for the different elements over various positions in the crystallographic unit cells. In all cases the electrical resistivity is of metal type with much higher values for this series of new compounds that contains a lower amount of copper. A spin and charge self-consistent KKR type of method was used to calculate the electronic structure of the M2CuSb3 intermetallics. The theoretical calculations support well a metal type conductivity. Further discussions on the electronic properties are based on the different contributions to the DOS at the Fermi level, arising from the different elements and their different sub-bands. By comparison to the reference compound Cu2Sb, structural trends are proposed for a better understanding of the band structure peculiarities and the corresponding electrical resistivity characteristics. (C) 2002 Elsevier Science B.V. All rights reserved.

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