Szczegóły publikacji
Opis bibliograficzny
High-entropy perovskites as multifunctional metal oxide semiconductors: synthesis and characterization of $(Gd_{0.2}Nd_{0.2}La_{0.2}Sm_{0.2}Y_{0.2})CoO_{3}$ / Paweł A. Krawczyk, Michał JURCZYSZYN, Jakub PAWLAK, Wojciech Salamon, Paweł Baran, Angelika KMITA, Łukasz GONDEK, Marcin SIKORA, Czesław KAPUSTA, Tomasz STRĄCZEK, Jan WYRWA, Antoni ŻYWCZAK // ACS Applied Electronic Materials [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 2637-6113. — 2020 — vol. 2 iss. 10, s. 3211–3220. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 3219–3220, Abstr. — Publikacja dostępna online od: 2020-09-18
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Dane bibliometryczne
| ID BaDAP | 131150 |
|---|---|
| Data dodania do BaDAP | 2020-11-24 |
| Tekst źródłowy | URL |
| DOI | 10.1021/acsaelm.0c00559 |
| Rok publikacji | 2020 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | ACS Applied Electronic Materials |
Abstract
Single-phase multicomponent perovskite-type cobalt oxide containing five cations in equiatomic amounts on the A-site, namely, (Gd0.2Nd0.2La0.2Sm0.2Y0.2)CoO3, has been synthesized via the modified coprecipitation hydrothermal method. Using an original approach for heat treatment, which comprises quenching utilizing liquid nitrogen as a cooling medium, a single-phase ceramic with high configuration entropy, crystallizing in an orthorhombic distorted structure was obtained. It reveals the anomalous temperature dependence of the lattice expansion with two weak transitions at approx. 80 and 240 K that are assigned to gradual crossover from the low- via intermediate- to high-spin state of Co3+. The compound exhibits weak ferromagnetism at T <= 10 K and signatures of antiferromagnetic correlations in the paramagnetic phase. Ab initio calculations predict a band gap Delta = 1.18 eV in the ground-state electronic structure with the dominant contribution of O_p and Co_d orbitals in the valence and conduction bands, respectively. Electronic transport measurements confirm the negative temperature coefficient of resistivity characteristic to a semiconducting material and reveal a sudden drop in activation energy at T similar to 240 K from E-a similar to 1 eV in the low-temperature phase to E-a similar to 0.3 eV at room temperature. The possibility of fine tuning of the semiconducting band gap via a subtle change in A-site stoichiometry is discussed.
