Szczegóły publikacji
Opis bibliograficzny
Subtractive laser processing of anisotropic $Si_{3}N_{4^{-}}$ graphene platelet (GPL) materials / Paweł RUTKOWSKI // Materials Letters ; ISSN 0167-577X. — 2020 — vol. 263 art. no. 127207, s. 1–4. — Bibliogr. s. 4, Abstr. — Publikacja dostępna online od: 2019-12-20
Autor
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 126842 |
|---|---|
| Data dodania do BaDAP | 2020-02-01 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.matlet.2019.127207 |
| Rok publikacji | 2020 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Materials Letters |
Abstract
Silicon nitride exhibits good thermal shock resistance and, therefore, it can be shaped by laser processing. Generally, laser treatment mostly depends on wavelength absorption, surface quality and thermal conductivity. Subtractive laser processing is an efficient method of modification up to 1500 µm depth and usually runs in pulse working (PW) mode. In case of continuous work (CW) mode, intensive processing conditions can result in material destruction which is presented for reference in this paper. The previous research indicates that the hot pressing of the silicon nitride material with GPL particles allowed for obtaining a specific orientation of the 2D graphene-like particles in the material. This led to the anisotropy of its thermal properties. As a result, the positive influence of the oriented heat flow on material laser ablation was investigated. The investigation of the Si3N4/GPLs confirmed the good quality of the laser cut which can proceed throughout the sample. The reported penetration depth reached over 3 mm. The laser treated areas were dimensionally measured and taken under optical and SEM/EDS observation.
