Szczegóły publikacji
Opis bibliograficzny
The influence of emitter resistance on the electrical parameters of mono- and multicrystalline silicon solar cells / Barbara SWATOWSKA, Piotr Panek, Dagmara MICHOŃ, Aleksandra Drygała // Microelectronics International ; ISSN 1356-5362. — 2019 — vol. 36 iss. 3, s. 90–94. — Bibliogr. s. 94, Abstr. — Publikacja dostępna online od: 2019-07-01. — 42nd International-Microelectronics-and-Packaging-Society (IMAPS) Poland international conference : Gliwice, Poland, September 23-26, 2018
Autorzy (4)
- AGHSwatowska Barbara
- Panek Piotr
- AGHMichoń Dagmara
- Drygała Aleksandra
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 123425 |
|---|---|
| Data dodania do BaDAP | 2019-09-11 |
| Tekst źródłowy | URL |
| DOI | 10.1108/MI-04-2019-0019 |
| Rok publikacji | 2019 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Microelectronics International |
Abstract
Purpose The purpose of this study was the comparison and analysis of the electrical parameters of two kinds of silicon solar cells (mono- and multicrystalline) of different emitter resistance. Design/methodology/approach By controlling of diffusion parameters, silicon mono- (Cz-Si) and multicrystalline (mc-Si) solar cells with different emitter resistance values were produced - 22 and 48 omega/. On the basis of current-voltage measurements of cells and contact resistance mapping, the properties of final solar cells based on two different materials were compared. Additionally, the influence of temperature on PV cells efficiency and open circuit voltage (U-oc) were investigated. The PC1D simulation was useful to determine spectral dependence of external quantum efficiency of solar cells with different emitter resistance. The silicon solar cells of 25 cm(2) area and 240 mu m thickness were investigated. Findings Considering the all stages of cell technology, the best structure is silicon solar cell with sheet resistance (R-sheet) of 45-48 omega/. Producing of an emitter with this resistance allowed to obtain cells with a fill factor between 0.725 and 0.758, U-oc between 585 and 612 mV, short circuit current (I-sc) between 724 and 820 mA. Originality/value Measurements and analysis confirmed that mono- and multicrystalline silicon solar cells with 48 omega/ emitter resistance have better parameters than cells with R-sheet of 22 omega/. The contact resistance is the highest for mc-Si with R-sheet of 48 omega/ and reaches the value 3.8 omega cm.