Szczegóły publikacji
Opis bibliograficzny
Influence of pulse frequency on physicochemical properties of InSb films obtained via electrodeposition / Katarzyna E. HNIDA, Mateusz MARZEC, Ewelina WLAŹLAK, Damian Chlebda, Konrad SZACIŁOWSKI, Dominika Gilek, Grzegorz D. Sulka, Marek PRZYBYLSKI // Electrochimica Acta : Journal of the International Society of Electrochemistry ; ISSN 0013-4686. — 2019 — vol. 304, s. 396–404. — Bibliogr. s. 403–404, Abstr. — Publikacja dostępna online od: 2019-02-27. — E. Wlaźlak - dod. afiliacja: Jagiellonian University ; M. Przybylski - pierwsza afiliacja: AGH Academic Centre for Materials and Nanotechnology
Autorzy (8)
- AGHHnida-Gut Katarzyna
- AGHMarzec Mateusz M.
- AGHWlaźlak Ewelina
- Chlebda Damian K.
- AGHSzaciłowski Konrad
- Rajska Dominika
- Sulka Grzegorz D.
- AGHPrzybylski Marek
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 120594 |
|---|---|
| Data dodania do BaDAP | 2019-03-22 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.electacta.2019.02.111 |
| Rok publikacji | 2019 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Electrochimica Acta |
Abstract
Presented work focuses on the tremendous and often skipped role of pulse frequency on the structural, optical and electrical properties of electrodeposited InSb films. Tailoring the pulse frequency during electrodeposition allows to obtain stoichiometric, nanocrystalline, smooth films with relatively high electrical conductivity or Sb-rich, almost insulating, ultra smooth ones. It was observed that a double coherent domain size reduction (via decrease of pulse frequency) leads to a six fold increase in resistivity of the film. Further increasing pulse on time results in increasing resistivity of the material up to ca. 540 Ω cm. Based on the FTIR and SPV measurements it was confirmed that obtained materials are characterized by small band gap and p-type conductivity. Moreover, stoichiometric, ultra smooth InSb films obtained with 10 ms pulse on time have high photovoltage amplitude and charging time constant with relatively high conductivity, which makes them a good, low-cost candidate for optoelectronic devices.
