Szczegóły publikacji
Opis bibliograficzny
The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD / K. DUL, S. JONAS, B. HANDKE // Applied Surface Science ; ISSN 0169-4332. — Tytuł poprz.: Applications of Surface Science. — 2017 — vol. 425, s. 965–971. — Bibliogr. s. 971, Abstr. — Publikacja dostępna online od: 2017-07-18
Autorzy (3)
Dane bibliometryczne
| ID BaDAP | 118500 |
|---|---|
| Data dodania do BaDAP | 2018-12-18 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2017.07.135 |
| Rok publikacji | 2017 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Surface Science |
Abstract
Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1, S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) layers S3, S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.