Szczegóły publikacji
Opis bibliograficzny
Comparative analysis of the readout front-end electronics implemented in deep submicron technologies / R. KŁECZEK, P. KMON // Journal of Instrumentation [Dokument elektroniczny]. — Czasopismo elektroniczne ; ISSN 1748-0221. — 2018 — vol. 13 art. no. C11002, s. 1–9. — Wymagania systemowe: Adobe Reader. — Bibliogr. s. 9, Abstr. — Publikacja dostępna online od: 2018-11-05. — 20th international workshop on Radiation imaging detectors : 24–28 June 2018, Sundsvall, Sweden
Autorzy (2)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 118241 |
|---|---|
| Data dodania do BaDAP | 2018-11-28 |
| Tekst źródłowy | URL |
| DOI | 10.1088/1748-0221/13/11/C11002 |
| Rok publikacji | 2018 |
| Typ publikacji | referat w czasopiśmie |
| Otwarty dostęp |  |
| Creative Commons | |
| Czasopismo/seria | Journal of Instrumentation |
Abstract
This paper presents the impact of the employed CMOS nanometer technologies (28 nm and 40 nm) on the readout front-end electronics parameters with the emphasis on the count-rate capability and noise performance. The fast signal processing readout front-end electronics is analyzed by providing mathematical formulas with the highlight on technology-related parameters. The front-end electronics input transistor parameters are also compared among considered technologies. Finally, the complete channel, which analog core based on the charge sensitive amplifier, dedicated for pixel detector readout for a given set of requirements is designed and verified in terms of count-rate performance.
