Szczegóły publikacji
Opis bibliograficzny
Electron spin inversion in gated silicene nanoribbons / Bartłomiej RZESZOTARSKI, Bartłomiej SZAFRAN // Physical Review. B ; ISSN 2469-9950. — Tytuł poprz.: Physical Review B, Condensed Matter and Materials Physics ; ISSN: 1098-0121. — 2018 — vol. 98 iss. 7, s. 075417-1–075417-8. — Bibliogr. s. 075417-7–075417-8
Autorzy (2)
Dane bibliometryczne
| ID BaDAP | 116182 |
|---|---|
| Data dodania do BaDAP | 2018-09-14 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.98.075417 |
| Rok publikacji | 2018 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physical Review, B |
Abstract
We study locally gated silicene nanoribbons as spin active devices and we solve the quantum scattering problem in the atomistic tight-binding formalism. Particular attention is paid to the low energy range for which only four subbands appear at the Fermi level. We find that the gated segments of zigzag nanoribbons can be used for spin inversion. The strong intrinsic spin-orbit coupling in the presence of an external vertical electric field provides a fast spin precession around the axis perpendicular to the silicene plane. The spin inversion length can be as small as 10 nm. On the other hand, in the armchair nanoribbons the spin inversion occurs via the Rashba effect which is weak and the spin inversion lengths are of the order of microns.