Szczegóły publikacji
Opis bibliograficzny
Valley qubit in a gated $MoS_{2}$ monolayer quantum dot / J. Pawłowski, D. ŻEBROWSKI, S. BEDNAREK // Physical Review. B ; ISSN 2469-9950. — Tytuł poprz.: Physical Review B, Condensed Matter and Materials Physics ; ISSN: 1098-0121. — 2018 — vol. 97 iss. 15 art. no. 155412, s. 155412-1–155412-12. — Bibliogr. s. 155412-11–155412-12. — Publikacja dostępna online od: 2018-04-16
Autorzy (3)
- Pawłowski Jarosław
- AGHŻebrowski Dariusz Paweł
- AGHBednarek Stanisław
Dane bibliometryczne
| ID BaDAP | 113983 |
|---|---|
| Data dodania do BaDAP | 2018-06-11 |
| Tekst źródłowy | URL |
| DOI | 10.1103/PhysRevB.97.155412 |
| Rok publikacji | 2018 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Physical Review, B |
Abstract
The aim of the presented research is to design a nanodevice, based on a MoS2 monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate-induced quantum dot within the monolayer, and to perform the NOT operation on its valley degree of freedom. The operations are carried out all electrically via modulation of the confinement potential by oscillating voltages applied to the local gates. Such quantum dot structure is modeled realistically. Through these simulations we investigate the possibility of realization of a valley qubit in analogy with a realization of the spin qubit. We accurately model the potential inside the nanodevice accounting for proper boundary conditions on the gates and space-dependent materials permittivity by solving the generalized Poisson's equation. The time evolution of the system is supported by realistic self-consistent Poisson-Schrodinger tight-binding calculations. The tight-binding calculations are further confirmed by simulations within the effective continuum model.