Szczegóły publikacji
Opis bibliograficzny
Development of a four-side buttable X-ray detection module with low dead area using the UFXC32k chips with TSVs / K. KASIŃSKI, P. GRYBOŚ, P. KMON, P. MAJ, R. SZCZYGIEŁ, K. Zoschke // IEEE Transactions on Nuclear Science ; ISSN 0018-9499. — 2017 — vol. 64 no. 8 pt. 2, s. 2433–2440. — Bibliogr. s. 2440, Abstr. — Publikacja dostępna online od: 2017-06-29
Autorzy (6)
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 107769 |
|---|---|
| Data dodania do BaDAP | 2017-10-07 |
| Tekst źródłowy | URL |
| DOI | 10.1109/TNS.2017.2721643 |
| Rok publikacji | 2017 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | IEEE Transactions on Nuclear Science |
Abstract
Nowadays, single photon counting pixel hybrid detectors are becoming increasingly popular in high-energy physics, X-ray detectors for synchrotron applications, and medical imaging. Readout chips for these detectors usually have the area of a few square centimeters and are designed to be abutted on three sides. However, many applications require large-area detectors without dead areas. The through-silicon vias (TSVs) aim to minimize the dead area and in that way to enable development of four-side buttable large-area detectors. AGH, Krakow, and IZM, Berlin, have undertaken a common effort to apply TSV (via last) technology to the readout integrated circuit called UFXC32k containing a matrix of 128×256 pixels, with a pixel pitch of 75 μm and a total area of 2 cm2. The TSVs were applied to the 87 I/O pads located at the bottom of UFXC32k IC. A TSV diameter of 20 μm was chosen while the wafers were thinned to 100 μm . The redistribution layer and the array of pads for solder bumping were distributed at the bottom side of the chips. Two UFXC32k chips with TSVs were attached to a single, 320- μm -thick silicon sensor and finally, the chip detector modules were attached to low-temperature co-fired ceramic boards. The 2×2 cm2 plug-in detector modules were successfully built and tested.
