Szczegóły publikacji
Opis bibliograficzny
Interfacial kinetics in nanosized Au/Ge films: an in situ TEM study / Aleksandr P. KRYSHTAL, Alexey A. Minenkov, Paulo J. Ferreira // Applied Surface Science ; ISSN 0169-4332. — Tytuł poprz.: Applications of Surface Science. — 2017 — vol. 409, s. 343–349. — Bibliogr. s. 349, Abstr. — Publikacja dostępna online od: 2017-03-08. — A. P. Kryshtal – dod. afiliacja: Karazin Kharkiv National University
Autorzy (3)
- AGHKryshtal Oleksandr
- Minenkov Alexey
- Ferreira Paulo
Słowa kluczowe
Dane bibliometryczne
| ID BaDAP | 105211 |
|---|---|
| Data dodania do BaDAP | 2017-05-23 |
| Tekst źródłowy | URL |
| DOI | 10.1016/j.apsusc.2017.03.037 |
| Rok publikacji | 2017 |
| Typ publikacji | artykuł w czasopiśmie |
| Otwarty dostęp |  |
| Czasopismo/seria | Applied Surface Science |
Abstract
We investigate the morphology and crystalline structure of Au/Ge films in a wide range of temperatures by in situ TEM heating. Au/Ge films with Au mass thickness of 0.2–0.3 nm and Ge thickness of 5 nm were produced in vacuum by the sequential deposition of components on a carbon substrate at room temperature. It has been shown that particles with an average size of 4 nm, formed by Au film de-wetting, melt on the germanium substrate at temperatures 110–160 °C, which are below the eutectic temperature for the bulk. The effect of crystallization-induced capillary motion of liquid eutectic particles over Ge surface has been found in this work. Formation of metastable fcc phase of Ge has been observed at the liquid–germanium interface and behind the moving particle. Formation of a liquid phase with its subsequent crystallization at the metal–semiconductor interface seems to play a key role in the metal-induced crystallization effect.
